Nonlinear Crystals


Nonlinear Crystals

Laser Crystals

AO & EO Crystals

Optical Crystals





  Sapphire (Al2O3)

  Spinel (MgAl2O4)

  Calcite (CaCO3)

  Magnesium Fluoride (MgF2)

  Calcium Fluoride (CaF2)

  Lithium Fluoride (LiF)

  Barium Fluoride (BaF2)

  Zinc Sulphide (ZnS)

  Zinc Selenide (ZnSe)

  Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs)

Gallium Arsenide used for lenses and beam splitters provides an alternative to ZnSe in medium and high power CW CO2 laser systems. It is most useful in applications where toughness and durability are important. Its hardness and strength make it a good choice where dust or abrasive particles tend to build up on or bombard the optical surfaces. When frequent cleaning by wiping is required, GaAs is excellent. The material is nonhygroscopic, safe to use in laboratory and field conditions and is chemically stable except when in contact with strong acids.

Specifications of GaAs
Transmission Range 0.6 to 21.0m
Refractive Index 2.4028 at 10m
Reflection Loss 29.1% at 10.6m (2 surfaces)
Absorption Coefficient 0.0005cm-1 at 10.6m
Restrahlen Peak 45.7microns
dn/dT +61 x 10-6/C at 10.6m at 298K
dn/d = 0 5.5m
Density 5.27g/cm3
Melting Point 1525C (dissociates about 700C)
Thermal Conductivity 18 W/(m K) at 298K
Thermal Expansion 7.1 x 10-6/ C at 273K
Hardness Knoop 120 with 50g indenter
Specific Heat Capacity 339 J kg-1 K-1
Bulk Modulus (K) 40 GPa
Young's Modulus (E) 67.2 GPa
Apparent Elastic Limit 55.1 MPa (8,000psi)
Poisson Ratio 0.28

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