|
Titanium
doped sapphire is the most widely used crystal for wavelength
tunable lasers. It is also an excellent medium capable of
generating ultrashort pulse, high gain and high power lasing.
Dream Lasers have successfully
produced large-sized (¦Õ120¡Á80mm) Ti: sapphire free of light
scatter and with dislocation density less than 102cm-2
by using the growth method of Temperature Gradient Technique
(TGT). TGT is characterized by the capabilities of growing
(001) oriented sapphire with high doping level (¦Á490=7.5cm-1),
high gain, and high laser damage threshold.
Pulsed,
quasi-cw, cw, ps and fs lasing with high efficiency have been
realized using TGT grown Ti: sapphire. Moreover, TGT grown
Ti: sapphire can also meet current applications such as in
large aperture amplifiers (diameter up to 50mm) for high power
generation and laser fusion etc.
|
Physical
Properties
| Chemical
Formula |
Ti3+:
Al2O3 |
| Crystal
Structure |
Hexagonal |
| Unite
Cell |
a=4.758,
c=12.991 |
| Density |
3.98g/cm3 |
| Hardness |
9mols,
1525-2000Knoop |
| Melting
Point |
2040¡æ |
Laser
Properties
| Laser
Action |
4-Level
Vibronic |
| Absorption
Band |
400-600nm
(peak at 490) |
| Tunable
Range |
660-1100nm
(peak at 490) |
| Fluorescence
Time |
3.2¦Ìs |
| Peak
Cross-section |
3-4¡Á10-19cm2 |
|
Refractive
Index |
1.76
(nominal) |
Laser
Rods Specificatio
|
Doped
Level |
0.06-0.5
at%Ti2Q3 |
| FOM |
100-300 |
| Diameter |
2-50mm
or specified |
| Brewster¡¯s
Angle or Specified |
| ¦Á490 |
7.5cm-1 |
| Wavefront
Distortion |
<l/8
at 633 nm |
| Surface
quality |
10/5
Scratch/Dig per MIL-O-13830B |
| Flatness
|
l/10
at 633 nm |
|
|
